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| STB160NF03L N-CHANNEL 30V - 0.0021 - 160A D2PAK STripFETTM POWER MOSFET TYPE STB160NF03L s s s s s VDSS 30 V RDS(on) < 0.0030 ID 160 A TYPICAL RDS(on) = 0.0021 LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE VERY LOW GATE CHARGE 100% AVALANCHE TESTED 3 1 D2PAK (TO-263) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density with ultra low on-resistance, superior switching characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs s DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(1) ID IDM (q) PTOT EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 15 160 113 640 300 2 2 -65 to 175 175 (1) Limited by Package (2) I SD 100A, di/dt 300A/s, V DD V(BR)DSS, Tj TJMAX. Unit V V V A A A W W/C J C C (q) Pulse width limited by safe operating area February 2001 1/9 STB160NF03L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.5 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 15V Min. 30 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250A VGS = 10 V, ID = 80 A VGS = 5 V, ID = 80 A VDS > ID(on) x RDS(on)max, VGS = 10V 160 Min. 1 0.0021 0.0042 0.0030 0.0070 Typ. Max. Unit V A DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID =80 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 210 5600 1720 310 Max. Unit S pF pF pF 2/9 STB160NF03L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15V, ID = 80A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 24V, ID = 160A, VGS = 10V Min. Typ. 28 285 123 21 40 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf td(off) tf tc Parameter Turn-off-Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 15V, ID = 80A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Vclamp =24V, ID =40A RG = 4.7, VGS = 10V Min. Typ. 110 65 110 35 70 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 160A, VGS = 0 ISD = 80A, di/dt = 100A/s, VDD = 15V, Tj = 25C (see test circuit, Figure 5) 80 180 4.5 Test Conditions Min. Typ. Max. 160 640 1.3 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 STB160NF03L Output Characteristics Tranfer Characteristics Tranconductance Static Drain-Source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STB160NF03L Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STB160NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB160NF03L D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 7/9 1 STB160NF03L D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W 8/9 BASE QTY 1000 mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 * on sales type STB160NF03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9 |
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